Vertically-aligned graphene nanowalls grown via plasma-enhanced chemical vapor deposition as a binder-free cathode in Li–O2 batteries Chih-Pin Han, Vediyappan Veeramani, Chen-Chih Hsu, Anirudha Jena, Ho Chang, Nai-Chang Yeh, Shu-Fen Hu, and Ru-Shi Liu
In the present report, vertically-aligned graphene nanowalls are grown on Ni foam (VA-G/NF) using plasma-enhanced chemical vapor deposition method at room temperature. Optimization of the growth conditions provides graphene sheets with controlled defect sites. The unique architecture of the vertically-aligned graphene sheets allows sufficient space for the ionic movement within the sheets and hence enhancing the catalytic activity. Further modification with ruthenium nanoparticles (Ru NPs) drop-casted on VA-G/NF improves the charge overpotential for lithium–oxygen (Li–O2) battery cycles. Such reduction we believe is due to the easier passage of ions between the perpendicularly standing graphene sheets thereby providing ionic channels.
“Fractionalized quantum excitations in correlated two-dimensional topological phases”, N.-C. Yeh*, Reviews in Physics 2, 1 (2017), [DOI: 10.1016/j.revip.2017.02.001]
Stabilization of hybrid perovskite CH3NH3PbI3 thin ﬁlms by graphene passivation
Wei-Shiuan Tseng, Meng-Huan Jao, Chen-Chih Hsu, Jing-Shun Huang, Chih-I. Wu and N.-C. Yeh
Hexagonal boron nitride (h-BN) is a promising two-dimensional insulator with a large band gap and low density of charged impurities that is isostructural and isoelectronic with graphene. Here we report the chemical and atomic-scale structure of CVD-grown wafer-scale (~25 cm2) h-BN sheets ranging in thickness from 1-20 monolayers. Atomic-scale images of h-BN on Au and graphene/Au substrates obtained by scanning tunneling microscopy (STM) reveal high h-BN crystalline quality in monolayer samples. Further characterization of 1-20 monolayer samples indicates uniform thickness for wafer-scale areas; this thickness control is a result of precise control of the precursor flow rate, deposition temperature and pressure. Raman and infrared spectroscopy indicate the presence of B-N bonds and reveal a linear dependence of thickness with growth time. X-ray photoelectron spectroscopy (XPS) shows the film stoichiometry, and the B/N atom ratio in our films is 1 ± 0.6% across the range of thicknesses. Electrical current transport in metal/insulator/metal (Au/h-BN/Au) heterostructures indicates that our CVD-grown h-BN films can act as excellent tunnel barriers with a high hard-breakdown field strength. Our results suggest that large-area h-BN films are structurally, chemically and electronically uniform over the wafer scale, opening the door to pervasive application as a dielectric in layered nanoelectronic and nanophotonic heterostructures.
Professor Nai-Chang Yeh, Co-Director of the Kavli Nanoscience Institute (KNI), was recently interviewed by Silver Rose Entertainment and Voice of Science for their series: BADASS WOMEN in SCIENCE for her research efforts on graphene. SRE Studios and Voice of Science are creating a video series to celebrate women working and succeeding in Science Technology Engineering and Math (STEM) fields. The interview was filmed in several of Professor Yeh’s labs with primary emphasis on our room temperature graphene growth process and also on our current research and technological applications of graphene. The interview and video was produced by Micah Haughey and can be found at the following youtube link:
Professor Nai-Chang Yeh, Co-Director of the Kavli Nanoscience Institute (KNI), was featured in a recent episode of the Horizons series “Abundant World” by the BBC World News for her research on graphene. The episode was filmed in one of Professor Yeh’s labs and also at the KNI, with primary emphasis on our room temperature graphene growth process (described by Staff Scientist Dr. David Boyd) and also on our current research and technological applications of graphene (described by Professor Yeh). The “Abundant World” episode was broadcasted on May 13, 14, 15 and 17 of 2016 worldwide by the BBC World News, which can also be found at the following BBC link:
Professor Nai-Chang Yeh was interviewed by the Chemical Engineering News (C&EN) for a news article entitled “Graphene’s Race to the Global Market”, which was published in C&EN 94 (15), 28-33 (2016) and can be found at the following link: http://cen.acs.org/articles/94/i15/Graphenes-global-race-market.html
J.-K. Chang et al., J. Appl. Phys. 119, 235301 (2016).
N.-C. Yeh, C.-C. Hsu, M. L. Teague, J.-Q. Wang, D. A. Boyd and C.-C. Chen, Acta Mechanica Sinica (2016); [DOI 10.1007/s10409-015-0548-9]
D.A. Boyd,W.-H. Lin, C.-C. Hsu, M.L. Teague, C.-C. Chen, Y.-Y. Lo, W.-Y. Chan, W.-B. Su, T.-C. Cheng, C.-S. Chang, C.-I. Wu and N.-C. Yeh, Nature Communications 6, 6620 (2015); [DOI 10.1038/ncomms7620]
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